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| SPP80N06S2-09 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor | |||
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Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
SPP80N06S2-09
SPB80N06S2-09
Symbol
Conditions
Values
Unit
min. typ. max.
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDSâ¥2*ID *RDS(on)max, 34
ID =70A
VGS=0V, VDS =25V,
-
f=1MHz
-
-
VDD =30V, VGS =10V,
-
ID =80A,
-
RG=4.7â¦
-
-
68 - S
2360 3140 pF
610 810
150 230
14 21 ns
29 44
39 58
28 42
Qgs
VDD =44V, ID =80A
Qgd
Qg
VDD =44V, ID =80A,
VGS=0 to 10V
V(plateau) VDD =44V, ID =80A
-
12 16 nC
-
24 37
-
60 80
- 5.8 - V
IS
ISM
VSD
trr
Qrr
TC=25°C
VGS=0V, IF=80A
VR =30V, IF=lS,
diF/dt=100A/µs
-
-
80 A
-
- 320
- 0.9 1.3 V
-
50 63 ns
-
76 95 nC
Page 3
2003-05-09
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