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SPP80N06S2-09 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor
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1 Power dissipation
Ptot = f (TC)
parameter: VGS≥ 6 V
200 SPP80N06S2-09
W
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160 °C 190
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
10 3 SPP80N06S2-09
A
tp = 7.3µs
10 µs
SPP80N06S2-09
SPB80N06S2-09
2 Drain current
ID = f (TC)
parameter: VGS≥ 10 V
90 SPP80N06S2-09
A
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 °C 190
TC
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SPP80N06S2-09
K/W
10 0
10 2
10 1
10 0
10 -1
10 0
100 µs
1 ms
10 -1
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 1
V
10 2
VDS
10 -4
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
s 10 0
tp
Page 4
2003-05-09
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