SPP80N06S2-09 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm² cooling area ³⁾
SPP80N06S2-09
SPB80N06S2-09
Symbol
Values
Unit
min. typ. max.
R_thJC
R_thJA
R_thJA
- 0.52 0.8 K/W
-
-
62
-
-
62
-
-
40
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V_GS=0V, I_D=1mA
Gate threshold voltage, V_GS = V_DS
I_D = 125 µA
Zero gate voltage drain current
V_DS=55V, V_GS=0V, T_j=25°C
V_DS=55V, V_GS=0V, T_j=125°C
Gate-source leakage current
V_GS=20V, V_DS=0V
Drain-source on-state resistance
V_GS=10V, I_D=50A
V_(BR)DSS 55
-
-V
V_GS(th)
2.1
3
4
I_DSS
I_GSS
µA
- 0.01 1
-
1 100
-
1 100 nA
R_DS(on)
-
7.6 9.1 _mΩ
1Current _{limited by bondwire ; with an RthJC = 0.8K/W the chip is able to carry ID= 99A at 25°C, for detailed}
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined _{by design. Not subject to production test.}
3Device _{on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical without blown air.
Page 2
2003-05-09