SGW02N120 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology

SGW02N120
7A
6A
5A
V_GE=17V
15V
4A
13V
11V
9V
3A
7V
2A
1A
0A
0V 1V 2V 3V 4V 5V 6V 7V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T_j = 25°C)
7A
6A
5A
V_GE=17V
15V
4A
13V
11V
9V
3A
7V
2A
1A
0A
0V 1V 2V 3V 4V 5V 6V 7V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T_j = 150°C)
7A
6A
5A
4A
T_j=+150°C
T_j=+25°C
3A
T_j=-40°C
2A
1A
0A
3V
5V
7V
9V
11V
V_GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V_CE = 20V)
6V
5V
I_C=4A
4V
I_C=2A
3V
I_C=1A
2V
1V
0V
-50°C 0°C 50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V_GE = 15V)
Power Semiconductors
5
Rev. 2 Jan. 05