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| SGW02N120 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology | |||
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SGW02N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction â case
Thermal resistance,
junction â ambient
Symbol
RthJC
RthJA
Conditions
PG-TO-247-3-1
Max. Value
Unit
2.5
K/W
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=100µA
VGE = 15V, IC=2A
Tj=25°C
Tj=150°C
IC=100µA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=2A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=2A
VGE=15V
PG-TO-247-3-1
VGE=15V,tSCâ¤10µs
100Vâ¤VCCâ¤1200V,
Tj ⤠150°C
min.
1200
2.5
-
3
-
-
-
-
-
-
-
-
-
Value
Unit
typ. max.
-
-V
3.1
3.6
3.7
4.3
4
5
µA
-
25
-
100
-
100 nA
1.5
-S
205 250 pF
20
25
12
14
11
- nC
13
- nH
24
-A
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2 Jan. 05
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