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SGW02N120 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology | |||
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SGW02N120
Fast IGBT in NPT-technology
⢠Lower Eoff compared to previous generation
⢠Short circuit withstand time â 10 µs
⢠Designed for:
- Motor controls
- Inverter
- SMPS
⢠NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
⢠Qualified according to JEDEC1 for target applications
⢠Pb-free lead plating; RoHS compliant
⢠Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3-1
(TO-247AC)
Type
SGW02N120
VCE
IC
Eoff
Tj
Marking
Package
Ordering Code
1200V 2A 0.11mJ 150°C G02N120 PG-TO-247-3-1 On Request
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ⤠1200V, Tj ⤠150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 2A, VCC = 50V, RGE = 25â¦, start at Tj = 25°C
Short circuit withstand time2
VGE = 15V, 100V ⤠VCC ⤠1200V, Tj ⤠150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Ts
Value
Unit
1200
V
A
6.2
2.8
9.6
9.6
±20
V
10
mJ
10
µs
50
W
-55...+150
°C
260
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2 Jan. 05
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