|
SGW02N120 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology | |||
|
◁ |
SGW02N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=800V,IC=2A,
VGE=15V/0V,
RG=91â¦,
LÏ1)=180nH,
CÏ1)=40pF
Energy losses include
âtailâ and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
23
16
260
61
0.16
0.06
0.22
Unit
max.
30 ns
21
340
80
0.21 mJ
0.08
0.29
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C
VCC=800V,
IC=2A,
VGE=15V/0V,
RG=91â¦,
LÏ1)=180nH,
CÏ1)=40pF
Energy losses include
âtailâ and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
26
14
290
85
0.27
0.11
0.38
Unit
max.
31 ns
17
350
102
0.33 mJ
0.15
0.48
1) Leakage inductance LÏ and stray capacity CÏ due to dynamic test circuit in figure E.
Power Semiconductors
3
Rev. 2 Jan. 05
|
▷ |