PTFC210202FC Datasheet, PDF (5/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFC210202FC
Broadband Circuit Impedance
Z Source
G1
G2
D1 ^{Z Load}
S
D2
Frequency
MHz
2110
2120
2130
2140
2150
2160
2170
Z Source 
R
jX
4.86
–0.01
4.89
–0.01
4.92
–0.01
4.95
–0.01
4.98
–0.02
5.00
–0.02
5.03
–0.03
Z Load 
R
jX
3.59
–2.65
3.63
–2.65
3.68
–2.66
3.72
–2.68
3.76
–2.69
3.81
–2.71
3.85
–2.73
Load Pull Performance
Each Side Load Pull Performance – CW signal; V_DD = 28 V, 85 mA
Max Output Power
P_1dB
Max PAE
Freq
Zs
[MHz]
[]
Zl
Gain
P_OUT
P_OUT
PAE
Zl
Gain
P_OUT
P_OUT
PAE
[]
[dB] [dBm]
[W]
[%]
[]
[dB]
[dBm]
[W]
[%]
2110 15.9 – j19.7 6.7 – j5.6
21.7
42.67
18.5
58.7
5.3 – j2.3
23.7
41.25
13.3
67.8
2140 15.7 – j18.8 7.6 – j4.9
22.3
42.16
16.4
60.5
4.9 – j2.3
24.1
40.89
12.3
67.3
2170 17.1 – j17.7 7.0 – j5.7
22.1
42.08
16.2
59.2
4.8 – j2.9
23.9
40.87
12.2
66.6
Data Sheet
5 of 9
Rev. 03.2, 2014-05-14