PTFC210202FC Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFC210202FC
Thermally-Enhanced High Power RF LDMOS FET
28 W, 28 V, 1800 – 2200 MHz
Description
The PTFC210202FC integrates two independent 10-watt LDMOS
FETs and is designed for use in cellular amplifier applications in the
2110 to 2170 MHz frequency band. Manufactured with Infineon's
advanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
PTFC210202FC
Package H-37248-4
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 170 mA, ƒ = 2170 MHz
3GPP WCDMA signal,
PAR = 7.5 dB, 3.84 MHz BW
24
60
20
Gain
40
16
20
12 ^Efficiency
0
8
-20
PAR @ 0.01% CCDF
4
-40
0
28
ptfc210202fc_g1
-60
32
36
40
44
Average Output Power (dBm)
Features
• Input matched
• Typical CW performance, 2170 MHz, 28 V,
combined outputs
- Output power at P_1dB = 28 W
- Efficiency = 62%
- Gain = 20.9 dB
• Capable of handling 10:1 VSWR @28 V, 28 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 170 mA, P_OUT = 5 W avg, ƒ₁ = 2160 MHz, ƒ₂ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol Min Typ
G_ps
_D
ACPR
20
21
26.5
29
—
–31
Max
—
—
–28
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 03.2, 2014-05-14