PTFC210202FC Datasheet, PDF (4/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

Typical Performance (cont.)
CW Performance at various V_DD
I_DQ = 170 mA, ƒ = 2170 MHz
26
65
24
60
22
Gain
55
20
50
18
45
16
40
14 _Efficiency
35
12
V_DD = 24 V
30
10
V_DD = 28 V
V_DD = 32 V
25
8
ptfc210202fc_g7
20
32 34 36 38 40 42 44 46 48
Output Power (dBm)
PTFC210202FC
CW Performance
V_DD = 28 V, I_DQ = 170mA
26
65
24
60
22 ^Gain
55
20
50
18
45
16
40
14
Efficiency
12
10
35
2110 MHz
30
2140 MHz
2170 MHz
25
8
ptfc210202fc_g6
20
34
36
38
40
42
44
46
Output Power (dBm)
Small Signal CW
Gain & Input Return Loss, single side
V_DD = 28 V, I_DQ = 170 mA
22
0
Gain
20
-5
18
-10
16
-15
14
-20
IRL
12
-25
10
1790
1890
1990 2090 2190
Frequency (MHz)
ptfc210202fc_g8
-30
2290 2390
Data Sheet
4 of 9
Rev. 03.2, 2014-05-14