PTFC210202FC Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFC210202FC
DC Characteristics (each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 0.17
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 25 W CW)
Ordering Information
Type and Version
PTFC210202FC V1
PTFC210202FC V1 R250
Order Code
PTFC210202FCV1XWSA1
PTFC210202FCV1R250XTMA1
Symbol
V(_BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
—
—
Typ
—
—
—
0.05
2.65
—
Max
—
1
10
—
—
1
Unit
V
µA
µA

V
µA
Symbol
V_DSS
V_GS
V_DD
T_J
T_STG
R_JC
Value
65
–6 to +10
0 to +32
225
–65 to +150
2.2
Unit
V
V
V
°C
°C
°C/W
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tray
Tape & Reel, 250 pcs
Data Sheet
2 of 9
Rev. 03.2, 2014-05-14