PTFB212503EL Datasheet, PDF (5/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
CW Performance
V_DD = 30 V, I_DQ = 1.85 A, ƒ = 2170 MHz
21
+25 ° C
20
+85° C
–10° C
19
Efficiency
18 _Gain
17
16
15
35
40
45
50
Output Power (dBm)
60
50
40
30
20
10
0
55
Single-carrier WCDMA
V_DD = 30 V, I_DQ = 1.85 A ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8.5 dB, BW 3.84 MHz
-20
60
-30
50
-40
40
-50
IM3
30
-60
Efficiency
20
-70
10
-80
0
33 35 37 39 41 43 45 47 49 51
Output Power (dBm)
PTFB212503EL
PTFB212503FL
CW Performance
Gain vs. Output Power
V_DD = 30 V, ƒ = 2170 MHz
19
I_DQ = 2.11 A
18
I_DQ = 1.85 A
17
I_DQ = 1.30 A
16
35
40
45
50
55
Output Power (dBm)
Single-carrier WCDMA, 3GGP Broadband
V_DD = 30 V, I_DQ = 1.85 A, P_OUT = 63 W
60
55
50
45
40 _Efficiency
35
30 IM3
25
20 Gain
15
10
1960 2020 2080
2140
2200
Frequency (MHz)
0
-5
RL
-10
-15
-20
-25
-30
-35
-40
-45
-50
2260 2320
Data Sheet
5 of 14
Rev. 07, 2010-11-04