PTFB212503EL Datasheet, PDF (3/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
PTFB212503EL
PTFB212503FL
Two-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 1.85 A, 3GPP signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-25
2170 MHz Low
-30
2170 MHz Up
2140 MHz Low
-35
2140 MHz Up
2110 MHz Low
-40
2110 MHz Up
-45
-50
-55
32 34 36 38 40 42 44 46 48 50
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 1.85 A ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
20
50
19
40
Gain
18
30
17
20
16
Efficiency
10
15
0
33 35 37 39 41 43 45 47 49 51
Output Power (dBm)
CW Power Sweep
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.85 A, ƒ = 2170 MHz
20
65
19
55
18
45
Gain
17
35
16
25
Efficiency
15
15
14
5
38 40 42 44 46 48 50 52 54
Output Power (dBm)
Two-tone Broadband Performance
V_DD = 30 V, I_DQ = 1.85 A, P_OUT = 100 W
60
-5
55
RL
-10
50
-15
45
Efficiency
-20
40
-25
35
-30
30
IMD 3
-35
25
-40
20
Gain
-45
15
-50
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Data Sheet
3 of 14
Rev. 07, 2010-11-04