PTFB212503EL Datasheet, PDF (4/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Drive-up
V_DD = 30 V, I_DQ = 1.85 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
-20
45
-25
40
-30
Efficiency
35
-35
30
-40
25
-45
20
-50
15
IMD 3rd
-55
10
-60
5
-65
0
37 39 41 43 45 47 49 51 53 55
Output Power, PEP (dBm)
Third Order Intermodulation Distortion
vs. Output Power
V_DD = 30 V, I_DQ = 1.85 A,
-20
-25
-30
2110 MHz
-35
2140 MHz
-40
2170 MHz
-45
-50
-55
-60
35
40
45
50
55
Output Power, PEP (dBm)
PTFB212503EL
PTFB212503FL
Two-tone Drive-up
V_DD = 30 V, I_DQ = 1.85 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
20
19
Gain
18
50
Efficiency
40
30
17
20
16
10
15
0
37 39 41 43 45 47 49 51 53 55
Output Power, PEP (dBm)
Intermodulation Distortion
V_DD = 30 V, I_DQ = 1.85 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
-20
-30
-40
-50
-60
-70
35
3rd Order
5th
7th
40
45
50
55
Output Power, PEP (dBm)
Data Sheet
4 of 14
Rev. 07, 2010-11-04