PTFB212503EL Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz

Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 2110 – 2170 MHz
PTFB212503EL
PTFB212503FL
Description
The PTFB212503EL and PTFB212503FL are 240-watt
LDMOS FETs intended for use in multi-standard cellular power
amplifier applications in the 2110 to 2170 MHz frequency band.
Features include input and output matching, high gain, wide
signal bandwidth and reduced memory effects for unparalleled
DPD correctability. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFB212503EL
Package H-33288-6
PTFB212503FL
Package H-34288-4/2
Two-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 1.85 A, ƒ = 2170 MHz,
3GPP signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-15
40
-20
ACPR
35
IMD Low
-25
IMD Up
30
-30
Efficiency
25
-35
20
-40
15
-45
10
-50
5
-55
0
32 34 36 38 40 42 44 46 48 50
Output Power (dBm)
RF Characteristics
Features
• Broadband internal input and output matching
• Enhanced for use in DPD error correction systems
• Wide video bandwidth
• Typical single-carrier WCDMA performance at 2170 MHz,
30 V, I_DQ = 1.85 A, 3GPP signal, channel bandwidth =
3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF
- Average output power = 49.4 dBm
- Linear gain = 18 dB
- Efficiency = 37%
- Intermodulation distortion = –33 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1_dB = 240 W
- Efficiency = 54 %
• Increased negative gate-source voltage range for
improved performance in Doherty peaking amplifiers
• Integrated ESD protection: Human Body Model, Class 2
(minimum)
• Capable of handling 10:1 VSWR @ 30 V, 240 W (CW)
output power
• Pb-free, RoHS-compliant
Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Infineon test
fixture)
V_DD = 30 V, I_DQ = 1.85 A, P_OUT = 55 W average, ƒ₁ = 2160 MHz, ƒ₂ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
G_ps
—
18.0
—
dB
hD
—
31
—
%
Intermodulation Distortion
IMD
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
—
–33
—
dBc
Rev. 07, 2010-11-04