PTFA261702E Datasheet, PDF (5/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 1800 mA, ƒ = 2680 MHz
18
17
T_CASE = 25°C
T_CASE = 90°C
16
15
Gain
14
13
12
Efficiency
11
10
10
50
90
130
170
Output Power (W)
60
50
40
30
20
10
210
Broadband Circuit Impedance
Z Source
G
G
Z Load
D
S
D
PTFA261702E
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.37 A
1.11 A
1.85 A
2.78 A
5.56 A
8.34 A
0
20 40 60 80 100
Case Temperature (°C)
Z₀ = 50 Ω
Z Source
2700 MHz
2600 MHz
Frequency
MHz
2600
2620
2640
2660
2680
2700
Z Source Ω
R
jX
8.9
–1.2
9.1
–1.2
9.2
–1.1
9.3
–0.9
9.4
–0.8
9.5
–0.6
Data Sheet
Z Load Ω
R
jX
7.0
–11.9
6.6
–11.5
6.2
–11.2
5.9
–10.9
5.7
–10.5
5.4
–10.2
Z Load
2700 MHz
0.2
2600 MHz
5 of 10
Rev. 01.1, 2009-02-20