PTFA261702E Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz

PTFA261702E
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 1800 mA, P_OUT = 170 W PEP, ƒ = 2650 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
14
15
η_D
31
33
IMD
—
–30
Max
—
—
–27
Unit
dB
%
dBc
DC Characteristics
Characteristic
Conditions
Symbol Min Typ
Drain-Source Breakdown Voltage V_GS = 0 V, I_DS = 10 mA
V_(BR)DSS
65
—
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—
V_DS = 63 V, V_GS = 0 V
I_DSS
—
—
On-State Resistance
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.08
Operating Gate Voltage
V_DS = 28 V, I_DQ = 1800 mA
V_GS
—
2.5
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
Max
—
1.0
10.0
—
—
1.0
Unit
V
µA
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 170 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
643
3.68
–40 to +150
0.272
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA261702E V1
Package Type
H-30275-4
Package Description
Thermally-enhanced slotted flange, push-pull
Marking
PTFA261702E
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Rev. 01.1, 2009-02-20