PTFA261702E Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz

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Typical Performance (cont.)
IS-95 CDMA Performance
V_DD = 28 V, I_DQ = 1800 mA, ƒ = 2680 MHz,
PAR = 9.8 dB @ 0.01 probability on CCDF
30
Efficiency
25
Adj 885 kHz
20
Alt1 1.25 MHz
15
10
5
0
35
37
39
41
43
45
Output Power (dBm), Avg.
-20
-30
-40
-50
-60
-70
-80
47
PTFA261702E
IS-95 CDMA Performance
V_DD = 28 V, I_DQ = 1800 mA, ƒ = 2680 MHz,
PAR = 9.8 dB @ 0.01 probability on CCDF
30
T_CASE = 25°C
-20
T_CASE = 90°C
-25
24
-30
-35
18
Adj 885 kHz
-40
Ef f icienc y
-45
12
-50
-55
6
-60
Alt₁ 1.25 M`Hz ^-65
0
-70
35 37 39 41 43 45 47
Output Power (dBm), Avg.
CW Sweep in a Broadband Test Fixture
V_DD = 28 V, I_DQ = 1800 mA, P_OUT = 50 dBm
40
19
35
18
30
Efficiency
17
25
16
20
15
Gain
15
14
10
2600
2620 2640 2660 2680
Frequency (MHz)
13
2700
Output Power vs. Supply Voltage
I_DQ = 1800 mA, ƒ = 2680 MHz
53.0
52.5
52.0
51.5
51.0
23
25
27
29
31
33
Supply Voltage (V)
Data Sheet
4 of 10
Rev. 01.1, 2009-02-20