PTFA261702E Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz

PTFA261702E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
170 W, 2500 – 2700 MHz
Description
The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX
power amplifier applications in the 2500 to 2700 MHz band. Features
include input and output matching, and thermally-enhanced package
with slotted flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
WiMAX Performance
V_DD = 28 V, I_DQ = 1800 mA,
(modulation = 64 QAM2/3, channel bandwidth = 3.5
MHz, sample rate = 4 MHz)
30
-15
Efficiency
25
EVM: ƒ = 2.62 GHz
-20
20
EVM: ƒ = 2.68 GHz
-25
EVM: ƒ = 2.65 GHz
15
-30
10
-35
5
-40
0
20
25 30 35 40 45
Output Power (dBm)
-45
50
PTFA261702E
Package H-30275-4
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical WiMAX performance at 2650 MHz, 28 V
- Average output power = 32 W
- Linear gain = 15 dB
- Efficiency = 20%
- Error vector magnitude = –29 dB
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
170 W (CW) output power
RF Characteristics
WiMAX Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 1800 mA, P_OUT = 32 W average
ƒ = 2650 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz
Characteristic
Gain
Drain Efficiency
Error Vector Magnitude
Symbol Min Typ
G_ps
—
15
η_D
—
20
EVM
—
–29
Max
—
—
—
Unit
dB
%
dB
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 01.1, 2009-02-20