PTFA091201E Datasheet, PDF (5/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz

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Typical Performance (cont.)
IS-95 CDMA Performance
V_DD = 28 V, I_DQ = 750 mA, ƒ = 960 MHz
40
T_CASE = 25°C
T_CASE = 90°C
35
-10
Efficiency
-20
30
-30
25
-40
20 _{Adj 750 kHz}
-50
15
-60
10
5
32
Alt1 1.98 MHz ^-70
-80
34 36 38 40 42 44 46
Output Power, Avg. (dBm)
PTFA091201E
PTFA091201F
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
0.4 A
1.2 A
3.0 A
6.0 A
9.0 A
0
20 40 60 80 100
Case Temperature (°C)
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
920
930
940
950
960
Z Source Ω
R
jX
5.86
–0.32
5.84
–0.27
5.85
–0.02
5.82
0.10
5.79
0.27
Z Load Ω
R
jX
2.20
0.69
2.17
0.69
2.16
0.85
2.15
0.92
2.13
1.02
Z₀ = 50 Ω
Z Load
960 MHz
920 MHz
Z Source
960 MHz
920 MHz
Data Sheet
5 of 10
Rev. 03, 2007-11-19