PTFA091201E Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz

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Typical Performance (cont.)
EDGE EVM Performance
V_DD = 28 V, I_DQ = 750 mA, ƒ = 959.8 MHz
9
90
8
80
7
70
6
60
5
50
Efficiency
4
40
3
30
2
EVM 20
1
10
0
0
36 38 40 42 44 46 48 50
Output Power, Avg. (dBm)
PTFA091201E
PTFA091201F
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 750 mA, ƒ = 960 MHz
20
70
19
60
Gain
18
50
17
40
16
30
15
20
Efficiency
14
10
40
43
46
49
52
Output Power (dBm)
Frequency Sweep at P–1dB
V_DD = 28 V, I_DQ = 750 m A
20
70
Efficiency
19
65
18 _Gain
17
16
60
55
Output Power
50
15
45
900 910 920 930 940 950 960
Frequency (MHz)
Output Power (P–1 dB) vs. Supply Voltage
I_DQ = 750 m A, ƒ = 960 MHz
52.5
52.0
51.5
51.0
50.5
50.0
49.5
24
26
28
30
32
Supply Voltage (V)
Data Sheet
4 of 10
Rev. 03, 2007-11-19