PTFA091201E Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz

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RF Characteristics (cont.)
Two–tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 750 mA, P_OUT = 110 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min
Gain
G_ps
18
Drain Efficiency
η_D
45
Intermodulation Distortion
IMD
—
PTFA091201E
PTFA091201F
Typ
Max
Unit
19
—
dB
48
—
%
–31
–28
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 750 mA
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.07
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 120 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
427
2.44
–40 to +150
0.41
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information (see pages 9 and 10 for further information)
Type and Version
PTFA091201E V4
PTFA091201F V4
Package Type
H-36248-2
H-37248-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA091201E
PTFA091201F
Data Sheet
2 of 10
Rev. 03, 2007-11-19