PTFA091201E Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz

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Thermally-Enhanced High Power RF LDMOS FETs
120 W, 920 – 960 MHz
PTFA091201E
PTFA091201F
Description
The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs
designed for ultra-linear GSM/EDGE power amplifier applications in
the 920 to 960 MHz band. Features include input and output matching,
and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA091201E
Package H-36248-2
PTFA091201F
Package H-37248-2
EDGE Modulation Spectrum Performance
V_DD = 28 V, I_DQ = 750 mA, ƒ = 959.8 MHz
0
55
-10
50
Efficiency
-20
45
-30
40
-40
35
-50
30
400 kHz
-60
25
-70
20
-80
600 kHz ¹⁵
-90
10
36 38 40 42 44 46 48 50
Output Power, Avg. (dBm)
Features
• Thermally-enhanced packages
• Broadband internal matching
• Typical EDGE performance
- Average output power = 50 W
- Gain = 19.0 dB
- Efficiency = 44%
• Typical CW performance
- Output power at P–1dB = 135 W
- Gain = 18.0 dB
- Efficiency = 64%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Pb-free and RoHS compliant
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
120 W (CW) output power
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 750 mA, P_OUT = 50 W, ƒ = 959.8 MHz
Characteristic
Symbol Min Typ
Max
Unit
Error Vector Magnitude
EVM (RMS) —
2.5
—
%
Modulation Spectrum @ 400 kHz
ACPR
—
–62
—
dBc
Modulation Spectrum @ 600 kHz
ACPR
—
–74
—
dBc
Gain
Drain Efficiency
G_ps
—
19
—
dB
η_D
—
44
—
%
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03, 2007-11-19