PTF080601 Datasheet, PDF (5/6 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Developmental PTF080601
Package Outline Specifications
Package 31248
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10± 0.051/0.025 [.004±.002/.001]
5. Lids are toleranced with reference to leads.
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Developmental Data Sheet
5
2003-12-05