PTF080601 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Developmental PTF080601
DC Characteristics at T_CASE = 25°C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, I_DS = 1 A
V_DS = 28 V, I_DQ = 550 mA
V_GS = 10 V, V_DS = 0 V
Symbol Min Typ
V_(BR)DSS
—
65
I_DSS
—
1.0
R_DS(on)
—
0.1
V_GS
—
3.2
I_GSS
—
—
Max
—
—
—
—
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
PTF080601A
PTF080601E
Thermal Resistance (T_CASE = 70°C) PTF080601A
PTF080601E
Symbol
V_DSS
V_GS
T_J
P_D
P_D
T_STG
R_θJC
R_θJC
Value
65
–0.5 to +12
200
180
1.03
195
1.11
–40 to +150
0.972
0.897
Unit
V
V
°C
W
W/°C
W
W/°C
°C
°C/W
°C/W
Developmental Data Sheet
2
2003-12-05