PTF080601 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Developmental PTF080601
LDMOS RF Power Field Effect Transistor
60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
Typical EDGE Modulation Spectrum Performance
Mod Spectrum vs. Output Power
V_DD = 28 V, I_DQ = 550 mA, f = 959.8 MHz
-20
50
-30
Efficiency ₄₅
40
-40
35
-50
30
400KHz
-60
25
20
-70
15
-80 ^600KHz
10
-90
5
32
34
36
38
40
42
44
46
Output Power (dBm)
Features
• Broadband internal matching
• Typical EDGE performance
- Average output power = 30 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW performance
- Output power at P–1dB = 90 W
- Gain = 17 dB
- Efficiency = 60%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
PTF080601A
Package 20248
PTF080601E
Package 30248
RF Characteristics at T_CASE = 25°C unless otherwise indicated
PTF080601F
Package 31248
Two-Tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 550 mA, P_OUT = 60 W PEP, f_C = 960 MHz, tone spacing = 1000 kHz
Characteristic
Symbol Min Typ
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
η_D
IMD
—
18
—
42
—
–32
Max
—
—
—
Units
dB
%
dBc
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 550 mA, P_OUT = 30 W, f = 959.8 MHz
Characteristic
Symbol Min Typ
Max Units
Error Vector Magnitude
EVM (RMS) —
2.0
—
%
Modulation Spectrum @ 400 KHz
ACPR
—
–61
—
dBc
Modulation Spectrum @ 600 KHz
ACPR
—
–74
—
dBc
Gain
Drain Efficiency
G_ps
—
18
—
dB
η_D
—
40
—
%
Developmental Data Sheet
1
2003-12-05