PTF080601 Datasheet, PDF (4/6 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Developmental PTF080601
Package Outline Specifications
Package 30248
(45° X 2.72
[.107])
CL
D
2X 4.83±0.51
[.190±.020]
S
9.78
[.385]
LID
9.40
+0.10
-0.15
CL
19.43 ±0.51
[.765±.020]
[.370 ^+-.]0.00064
G
2X R1.63
[.064]
1.02
[.040]
2X 12.70
[.500]
27.94
[1.100]
19.81±0.20
[.780±.008]
4X R1.52
[.060]
SPH 1.57
[.062]
0.025 [.001] _-A-
0.51
[.020]
34.04
[1.340]
3.76±0.38
[.140±.015]
ERA-H-30248
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10± 0.051/0.025 [.004±.002/.001]
5. Lids are toleranced with reference to leads.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Developmental Data Sheet
4
2003-12-05