IRFB38N20DPBF Datasheet, PDF (5/12 Pages) International Rectifier – HEXFET Power MOSFET

IRFB/S/SL38N20DPbF
45
40
35
30
25
20
15
10
5
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P _DM
0.0001
t₁
t₂
Notes:
1. Duty f actor D =
t₁/ t ₂
2. Peak T _J = P _DM x Z _thJC
+T _C
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2016-5-31