IRFB38N20DPBF Datasheet, PDF (2/12 Pages) International Rectifier – HEXFET Power MOSFET

IRFB/S/SL38N20DPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS
V_(BR)DSS/T_J
R_DS(on)
V_GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Dynamic @ T_J = 25°C (unless otherwise specified)
gfs
Forward Trans conductance
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
C_{oss eff.}
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
200
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.22
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
–––
0.054
5.0
25
250
100
-100
V V_GS = 0V, I_D = 250µA
V/°C Reference to 25°C, I_D = 1mA
 VGS = 10V, ID = 26A 
V V_DS = V_GS, I_D = 250µA
µA
V_DS =200 V, V_GS = 0V
V_DS = 160V,V_GS = 0V,T_J =150°C
nA
V_GS = 30V
V_GS = -30V
17 ––– –––
––– 60 91
––– 17 25
––– 28 42
––– 16 –––
––– 95 –––
––– 29 –––
––– 47 –––
––– 2900 –––
––– 450 –––
––– 73 –––
––– 3550 –––
––– 180 –––
––– 380 –––
S V_DS = 50V, I_D = 26A
I_D = 26A
nC V_DS = 100V
V_GS = 10V 
V_DD = 100V
ns
I_D =26A
R_G= 2.5
V_GS = 10V 
V_GS = 0V
V_DS = 25V
pF
ƒ = 1.0MHz
V_GS = 0V, V_DS = 1.0V ƒ = 1.0MHz
V_GS = 0V, V_DS = 160V ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 160V
Avalanche Characteristics
Parameter
E_AS
I_AR
E_AR
V_{DS (Avalanche)}
Single Pulse Avalanche Energy 
Avalanche Current 
Repetitive Avalanche Energy 
Repetitive Avalanche Voltage
Min.
–––
–––
–––
260
Typ.
–––
–––
390
–––
Max.
460
26
–––
–––
Units
mJ
A
mJ
V
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 44
––– ––– 180
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
––– ––– 1.5
––– 160 240
V T_J = 25°C,I_S = 26A,V_GS = 0V 
ns T_J = 25°C ,I_F = 26A
––– 1.3 2.0 C di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 starting T_J = 25°C, L = 1.3mH, R_G = 25, I_AS = 26A.
 I_SD 26A, di/dt 390A/µs, V_DD V_(BR)DSS, T_J  175°C.
 Pulse width 300µs; duty cycle  2%.
 C_oss eff. is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 80% V_DSS.
 This is only applied to TO-220AB package.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.
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2016-5-31