IRFB38N20DPBF Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET Power MOSFET

Applications
 High frequency DC-DC converters
 Plasma Display Panel
Benefits
 Low Gate-to-Drain Charge to Reduce Switching Losses
 Fully Characterized Capacitance Including Effective C_OSS
to Simplify Design, (See App. Note AN1001)
 Fully Characterized Avalanche Voltage and Current
 Lead-Free
IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
HEXFET^® Power MOSFET
Key Parameters
V_DS
200
V
V_{DS(Avalanche)} min.
R_DS(on) max @ 10V
T_J max
260
V
54
m
175
°C
D
D
D
GDS
S
G
TO-220AB
D2 Pak
IRFB38N20DPbF IRFS38N20DPbF
S
GD
TO-262 Pak
IRFSL38N20DPbF
G
Gate
D
Drain
S
Source
Base part number
IRFB38N20DPbF
IRFSL38N20DPbF
IRFS38N20DPbF
Package Type
TO-220
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB38N20DPbF
IRFSL38N20DPbF
IRFS38N20DPbF
IRFS38N20DTRLPbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V 
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
Continuous Drain Current, V_GS @ 10V 
Pulsed Drain Current 
Maximum Power Dissipation 
P_D @T_C = 25°C
Maximum Power Dissipation 
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
43*
30*
180
3.8
300*
2.0*
± 30
9.5
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JC
R_CS
R_JA
R_JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient 
Junction-to-Ambient ( PCB Mount, steady state) 
Typ.
–––
0.50
–––
–––
Max.
0.47*
–––
62
40
Units
°C/W
* R_JC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium.
Notes  through  are on page 2.
1
2016-5-31