IRFB38N20DPBF Datasheet, PDF (3/12 Pages) International Rectifier – HEXFET Power MOSFET

IRFB/S/SL38N20DPbF
1000
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
10
1
0.1
0.1
5.0V
300µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
10
5.5V
BOTTOM 5.0V
5.0V
1
0.1
0.1
300µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
1000.00
100.00
TJ = 25°C
TJ = 175°C
10.00
1.00
5.0
VDS = 15V
300µs PULSE WIDTH
7.0
9.0
11.0
13.0
15.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
3.5
I _D = 44A
3.0
2.5
2.0
1.5
1.0
0.5
V _GS= 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature
( ^° C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2016-5-31