IRF60R217 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Battery powered circuits

1000
100
10
TJ = 175°C
TJ = 25°C
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode Forward Voltage
75
Id = 1.0mA
70
65
60
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
24
VGS = 6.0V
VGS = 7.0V
20
VGS = 8.0V
VGS = 10V
16
1000
100
IRF60R217
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10
1msec
1
10msec
0.1 _{Tc = 25°C}
DC
Tj = 175°C
Single Pulse
0.01
0.1
1
10
100
VDS, Drain-toSource Voltage (V)
Fig 10. Maximum Safe Operating Area
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0.0
0
10 20 30 40 50 60
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical C_oss Stored Energy
12
8
4
0 20 40 60 80 100 120 140 160
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
2016-01-05