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IRF60R217 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Battery powered circuits | |||
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IRF60R217
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.(ER)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qgâ Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
120 âââ âââ S VDS = 10V, ID = 35A
âââ 40 66
ID = 35A
âââ
10
âââ nC VDS = 30V
âââ 12 âââ
VGS = 10V
âââ 28 âââ
âââ 7.6 âââ
VDD =30V
âââ
âââ
29
21
âââ
âââ
ns
ID = 35A
RG= 2.7ïï
âââ 12 âââ
VGS = 10V ï
âââ 2170 âââ
VGS = 0V
âââ 210 âââ
VDS = 25V
âââ 130 âââ pF Æ = 1.0MHz, See Fig. 7
âââ 228 âââ
VGS = 0V, VDS = 0V to 48Vï
Coss eff.(TR) Output Capacitance (Time Related)
âââ 283 âââ
VGS = 0V, VDS = 0V to 48Vï
Diode Characteristics
Symbol
IS
ISM
VSD
dv/dt
trr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)ï ïï
Diode Forward Voltage
Peak Diode Recovery dv/dt ïï
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
18
27
30
26
33
1.7
Max. Units
Conditions
58
217
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
D
S
1.2 V TJ = 25°C,IS = 35A,VGS = 0V ïï
âââ V/ns TJ = 175°C,IS = 35A,VDS = 60V
âââ
âââ
ns
TJ = 25°C
TJ = 125°C
VDD = 51V
IF = 35A,
âââ
âââ
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs ïï ï
âââ A TJ = 25°C ï
3
2016-01-05
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