IRF60R217 Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Battery powered circuits

1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
1
0.1
4.5V
 60µs PULSE WI DTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
 60µs PULSE WIDTH
0.1
2
3
4
5
6
7
8
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRF60R217
4.5V
10
1
0.1
 60µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
2.5
ID = 35A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
14
ID= 35A
12
VDS= 48V
10
VDS= 30V
VDS= 12V
8
6
4
2
0
0
10 20 30 40 50 60
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs. Drain-to-Source Voltage
2016-01-05