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IRF60R217 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Battery powered circuits | |||
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IRF60R217
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current ïï
Maximum Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy ïï
EAS (Thermally limited) Single Pulse Avalanche Energy ïï
IAR
Avalanche Current ï
EAR
Repetitive Avalanche Energy ï
Thermal Resistance
Symbol
Parameter
Rï±JC
Junction-to-Case ïï
Rï±JA
Junction-to-Ambient (PCB Mount) ï
Rï±JA
Junction-to-Ambient ï
Max.
58
41
217
83
0.56
± 20
-55 to + 175
300
85
124
See Fig 15, 16, 23a, 23b
Typ.
âââ
âââ
âââ
Max.
1.8
50
110
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ïV(BR)DSS/ïTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Gate Resistance
Min. Typ. Max.
60 âââ âââ
âââ 0.047 âââ
âââ 8.0 9.9
âââ 10 âââ
2.1 âââ 3.7
âââ âââ 1.0
âââ âââ 150
âââ âââ 100
âââ âââ -100
âââ 2.0 âââ
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA ï
mïï ï
VGS = 10V, ID = 35A ï
VGS = 6.0V, ID = 18A ï
V VDS = VGS, ID = 50µA
µA
VDS = 60V, VGS = 0V
VDS = 60V,VGS = 0V,TJ =125°C
nA
VGS = 20V
VGS = -20V
ïï
Notes:
ïï Repetitive rating; pulse width limited by max. junction temperature.
ï Limited by TJmax, starting TJ = 25°C, L = 0.14mH, RG = 50ï, IAS = 35A, VGS =10V.
ïï ISD ï£ 35A, di/dt ï£ 862A/µs, VDD ï£ V(BR)DSS, TJ ï£ï 175°C.
ïï Pulse width ï£ 400µs; duty cycle ï£ 2%.
ï
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
ï Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
ï Rï± is measured at TJ approximately 90°C.
ïï When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
ï Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50ï, IAS = 16A, VGS =10V.
2
2016-01-05
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