IDB12E120 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – Fast Switching EmCon Diode

IDP12E120
IDB12E120
5 Typ. reverse recovery time
t_rr = f (di_F/dt)
parameter: V_R = 800V, T_j = 125°C
800
ns
24A
12A
600
6A
500
400
300
200
100
0
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
7 Typ. reverse recovery current
I_rr = f (di_F/dt)
parameter: V_R = 800V, T_j = 125°C
26
A
22
20
18
16
14
24A
12A
12
6A
10
8
6
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
6 Typ. reverse recovery charge
Q_rr=f(di_F/dt)
parameter: V_R = 800V, T_j = 125 °C
2500
nC
24A
2300
2200
2100
2000
12A
1900
1800
1700
1600
6A
1500
1400
1300
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
8 Typ. reverse recovery softness factor
S = f(di_F/dt)
parameter: V_R = 800V, T_j = 125°C
15
13
24A
12
12A
6A
11
10
9
8
7
6
5
4
3
2
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
Rev.2
Page 5
2003-07-31