IDB12E120 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Fast Switching EmCon Diode

IDP12E120
IDB12E120
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm² cooling area ¹⁾
Symbol
Values
Unit
min. typ. max.
R_thJC
R_thJA
R_thJA
-
-
1.3 K/W
-
-
62
-
-
62
-
35
-
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Reverse leakage current
V_R=1200V, T_j=25°C
V_R=1200V, T_j=150°C
I_R
-
- 100
-
- 1000
Forward voltage drop
I_F=12A, T_j=25°C
I_F=12A, T_j=150°C
V_F
- 1.65 2.15
-
1.7
-
Unit
µA
V
1Device _{on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical without blown air.
Rev.2
Page 2
2003-07-31