IDB12E120 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Fast Switching EmCon Diode

Fast Switching EmCon Diode
Feature
• 1200 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
IDP12E120
IDB12E120
Product Summary
V_RRM
I_F
V_F
T_jmax
1200 V
12 A
1.65 V
150 °C
P-TO220-3.SMD
P-TO220-2-2.
Type
IDP12E120
IDB12E120
Package
Ordering Code
P-TO220-2-2. ^Q67040-S4389
P-TO220-3.SMD Q67040-S4385
Marking Pin 1
D12E120 ^C
D12E120 NC
PIN 2
A
C
PIN 3
-
A
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continous forward current
T_C=25°C
T_C=90°C
V_RRM
I_F
Surge non repetitive forward current
I_FSM
T_C=25°C, t_p=10 ms, sine halfwave
Maximum repetitive forward current
I_FRM
T_C=25°C, t_p limited by T_jmax, D=0.5
Power dissipation
P_tot
T_C=25°C
T_C=90°C
Operating and storage temperature
Soldering temperature
1.6mm(0.063 in.) from case for 10s
T_j , T_stg
T_S
Value
1200
28
17
63
42.5
96
46
-55...+150
260
Unit
V
A
W
°C
°C
Rev.2
Page 1
2003-07-31