IDB12E120 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – Fast Switching EmCon Diode

1 Power dissipation
P_tot = f (T_C)
parameter: Tj ≤ 150°C
100
W
80
70
60
50
40
30
20
10
0
25
50
75
100
°C
150
T_C
3 Typ. diode forward current
I_F = f (V_F)
2 Diode forward current
I_F = f(T_C)
parameter: T_j≤ 150°C
30
IDP12E120
IDB12E120
A
20
15
10
5
0
25
50
75
100
°C
150
T_C
4 Typ. diode forward voltage
V_F = f (T_j)
36
A
-55°C
25°C
28
100°C
150°C
24
20
2.4
24A
V
2
1.8
12A
16
1.6
12
6A
1.4
8
1.2
4
0
0
0.5
1
1.5
2
V
3
V_F
Rev.2
Page 4
1
-60
-20
20
60
100 _°C 160
T_j
2003-07-31