FP75R17N3E4 Datasheet, PDF (5/13 Pages) Infineon Technologies AG – EconoPIM™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTC

TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
FP75R17N3E4
Diode,Brems-Chopper/Diode,Brake-Chopper
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
Dauergleichstrom
ContinuousDCforwardcurrent
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
Rückstromspitze
Peakreverserecoverycurrent
IF = 50 A, - diF/dt = 1500 A/µs (Tvj=150°C)
VR = 900 V
VGE = -15 V
Sperrverzögerungsladung
Recoveredcharge
IF = 50 A, - diF/dt = 1500 A/µs (Tvj=150°C)
VR = 900 V
VGE = -15 V
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 50 A, - diF/dt = 1500 A/µs (Tvj=150°C)
VR = 900 V
VGE = -15 V
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VRRM 
1700
V
IF 
50
A
IFRM 
100
A
I²t 
310
260

A²s
A²s
VF
IRM
Qr
Erec
RthJC
min. typ. max.
1,80 2,20 V
1,90
V
1,95
V
55,0
A
64,0
A
68,0
A
15,0
µC
21,5
µC
24,5
µC
10,0
mJ
13,5
mJ
16,0
mJ
0,630 K/W
RthCH
0,279
K/W
Tvj op -40
150 °C
NTC-Widerstand/NTC-Thermistor
CharakteristischeWerte/CharacteristicValues
Nennwiderstand
Ratedresistance
TNTC = 25°C
AbweichungvonR100
DeviationofR100
TNTC = 100°C, R100 = 493 Ω
Verlustleistung
Powerdissipation
TNTC = 25°C
B-Wert
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B-Wert
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B-Wert
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
AngabengemäßgültigerApplicationNote.
Specificationaccordingtothevalidapplicationnote.
min. typ. max.
R25
5,00
kΩ
∆R/R -5
5%
P25
20,0 mW
B25/50
3375
K
B25/80
3411
K
B25/100
3433
K
preparedby:MB
approvedby:RS
dateofpublication:2016-06-07
revision:V3.0
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