FP75R17N3E4 Datasheet, PDF (2/13 Pages) Infineon Technologies AG – EconoPIM™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTC

TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
FP75R17N3E4
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
1700
75
125
150
555
+/-20
V

A
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 3,00 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 75 A, VCE = 900 V
VGE = ±15 V
RGon = 4,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 75 A, VCE = 900 V
VGE = ±15 V
RGon = 4,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 75 A, VCE = 900 V
VGE = ±15 V
RGoff = 4,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 75 A, VCE = 900 V
VGE = ±15 V
RGoff = 4,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 75 A, VCE = 900 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 2150 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 4,3 Ω
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 75 A, VCE = 900 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3000 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 4,3 Ω
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
min. typ. max.
VCE sat
1,95 2,30 V
2,35
V
2,45
V
VGEth 5,25 5,80 6,35 V
QG
0,90
µC
RGint
8,5
Ω
Cies
6,80
nF
Cres
0,22
nF
ICES
1,0 mA
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
100 nA
0,23
µs
0,25
µs
0,26
µs
0,036
µs
0,04
µs
0,045
µs
0,46
µs
0,60
µs
0,64
µs
0,08
µs
0,15
µs
0,16
µs
13,0
mJ
19,0
mJ
20,0
mJ
14,5
mJ
25,0
mJ
28,5
mJ
350
A
0,270 K/W
RthCH
0,120
K/W
Tvj op -40
150 °C
preparedby:MB
approvedby:RS
dateofpublication:2016-06-07
revision:V3.0
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