BFP520_10 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

Power gain G_ma, G_ms, |S₂₁|² = ƒ (f)
V_CE = 2 V, I_C = 20 mA
44
dB
36
G_ms
32
28
24
20
|S21|²
16
Gma
12
8
4
0
0
1
2
3
4 GHz
6
f
Power gain G_ma, G_ms = ƒ (V_CE)
I_C = 20 mA
f = parameter in GHz
32
dB
0.9
24
1.8
2.4
20
3
16
4
5
12
6
8
4
0
0
0.5
1
1.5
2
V
3
V_CE
BFP520
Power gain G_ma, G_ms = ƒ (I_C)
V_CE = 2V
f = parameter in GHz
32
dB
0.9
24
1.8
2.4
20
3
16
4
5
12
6
8
4
0
0 5 10 15 20 25 30 35 mA 45
I_C
Minimum noise figure NF_min = ƒ(I_C)
V_CE = 2 V, Z_S = Z_Sopt
3
dB
2
1.5
f = 6 GHz
f = 5 GHz
1
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
0.5
f = 1.8 GHz
f = 0.9 GHz
0
0
5 10 15 20 25 30 mA 40
I_C
2010-08-16