BFP520_10 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor
• Low noise amplifier designed for low voltage
applications, ideal for 1.2 V or 1.8 V supply
voltage. Supports 2.9 V V_cc with enough external
collector resistance.
• High gain and low noise at high frequencies
due to high transit frequency f_T = 45 GHz
• Finds usage e.g. in cordless phones and
satellite receivers
• Pb-free (RoHS compliant) standard package
with visible leads
• Qualified according AEC Q101
BFP520
3
4
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP520
Marking
Pin Configuration
APs
1=B 2=E 3=C 4=E -
-
Package
SOT343
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
V_CEO
T_A = -55 °C
Collector-emitter voltage
V_CES
Collector-base voltage
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Base current
I_B
Total power dissipation¹⁾
P_tot
T_S ≤ 105 °C
Junction temperature
T_J
Storage temperature
T_Stg
1_{TS is measured on the emitter lead at the soldering point to pcb}
Value
2.5
2.4
10
10
1
40
4
100
150
-55 ... 150
Unit
V
mA
mW
°C
2010-08-16