BFP520_10 Datasheet, PDF(3/10 Page) Infineon Technologies AG

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BFP520_10 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

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BFP520

Electrical Characteristics at TA = 25Â°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 30 mA, VCE = 2 V, f = 2 GHz

Collector-base capacitance

Ccb

VCB = 2 V, f = 1 MHz, VBE = 0 ,

emitter grounded

32 45

- GHz

- 0.07 0.13 pF

Collector emitter capacitance

VCE = 2 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

0.3

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

- 0.33 -

Minimum noise figure

IC = 2 mA, VCE = 2 V, ZS = ZSopt ,

f = 1.8 GHz

NFmin

- 0.95 - dB

Power gain, maximum stable1)

Gms

IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt ,

f = 1.8 GHz

- dB

Insertion power gain

VCE = 2 V, IC = 20 mA, f = 1.8 GHz,

ZS = ZL = 50 â¦

Third order intercept point at output

VCE = 2 V, IC = 20 mA, f = 1.8 GHz,

ZS = ZSopt, ZL = ZLopt

VCE = 2 V, IC = 7 mA, f = 1.8 GHz,

ZS = ZSopt, ZL = ZLopt

|S21|2

- 21.5 -

IP3

dBm

1dB Compression point at output

IC = 20 mA, VCE = 2 V, ZS = ZSopt,

ZL = ZLopt, f = 1.8 GHz

IC = 7 mA, VCE = 2 V, ZS = ZSopt,

ZL = ZLopt, f = 1.8 GHz

P-1dB

1Gms = |S21 / S12|

2010-08-16

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