BFP520_10 Datasheet, PDF (4/10 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

Total power dissipation P_tot = ƒ(T_S)
BFP520
Collector-base capacitance C_cb= ƒ(V_CB)
f = 1MHz
120
mW
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 °C 150
T_S
Third order Intercept Point IP₃ = ƒ (I_C)
(Output, Z_S = Z_L = 50 Ω )
V_CE = parameter, f = 900 MHz
0.3
pF
0.2
0.15
0.1
0.05
0
0
0.5
1
1.5
2
V
3
V_CB
Transition frequency f_T= ƒ(I_C)
f = 2 GHz
V_CE = parameter in V
52
GHz
2
44
40
1
36
32
28
24
20
0.75
16
12
8
4
0.5
0
0
5 10 15 20 25 30 35 mA 45
I_C
2010-08-16