AUIRFS4115 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – HEXFET Power MOSFET

AUIRFS/SL4115
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
_{J J}
_{1 1}
R_{1R 1}
Ci= iRi
Ci= iRi
R_{2R 2}
_{2 2}
_CC
Ri (°C/W)
0.245
0.155
i (sec)
0.0059149
0.0006322
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
IF = 42A
VR = 130V
40 _{TJ = 25°C}
TJ = 125°C
30
50
IF = 62A
VR = 130V
40 _{TJ = 25°C}
TJ = 125°C
30
20
20
10
10
0
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 14 - Typical Recovery Current vs. dif/dt
0
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 15 - Typical Recovery Current vs. dif/dt
2500
2000
1500
IF = 42A
VR = 130V
TJ = 25°C
TJ = 125°C
3000
2400
1800
IF = 62A
VR = 130V
TJ = 25°C
TJ = 125°C
1000
1200
500
600
0
0
200 400 600 800 1000
diF /dt (A/µs)
0
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
5
Fig. 17 - Typical Stored Charge vs. dif/dt
2015-10-27