AUIRFS4115 Datasheet, PDF (4/10 Pages) Infineon Technologies AG – HEXFET Power MOSFET

1000
100 ^{TJ = 175°C}
10
TJ = 25°C
1
0.1
0.0
VGS = 0V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VSD, Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
120
100
80
60
40
20
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fg 9. Maximum Drain Current vs. Case Temperature
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-20 0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
10000
1000
AUIRFS/SL4115
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
DC
100µsec
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
200
Id = 3.5mA
190
180
170
160
150
140
-60 -40 -20 0 20 40 60 80 100 120 140160 180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
6.0
5.0
4.0
ID = 250µA
3.0 ID = 1.0mA
ID = 1.0A
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 12. Maximum Avalanche Energy vs. Drain Current
2015-10-27