AUIRFS4115 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – HEXFET Power MOSFET

AUTOMOTIVE GRADE
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
AUIRFS4115
AUIRFSL4115
HEXFET^® Power MOSFET
V_DSS
150V
R_DS(on) typ.
max.
10.3m
12.1m
I_D
99A
D
D
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
S
G
D²Pak
AUIRFS4115
G
Gate
S
GD
TO-262
AUIRFSL4115
D
Drain
S
Source
Base part number
AUIRFSL4115
AUIRFS4115
Package Type
TO-262
D²-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFSL4115
AUIRFS4115
AUIRFS4115TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
E_AS
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery 
Single Pulse Avalanche Energy (Thermally Limited) 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
99
70
396
375
2.5
± 20
18
230
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
mJ
°C
Thermal Resistance
Symbol
Parameter
R_JC
Junction-to-Case 
R_JA
Junction-to-Ambient (PCB Mount), D² Pak
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
2015-10-27