AUIRF5210S Datasheet, PDF (5/10 Pages) International Rectifier – Advanced Planar Technology P-Channel MOSFET

40
35
30
25
20
15
10
5
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
AUIRF5210S
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
_{J J}
_{1 1}
R_1R1
Ci= iRi
Ci= iRi
R_2R2
_{2 2}
R_3R3
Ri (°C/W)
_{CC 0.128309}
_{3 3}
0.377663
0.244513
i (sec)
0.000069
0.001772
0.010024
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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2015-9-30