AUIRF5210S Datasheet, PDF (3/10 Pages) International Rectifier – Advanced Planar Technology P-Channel MOSFET

1000
100
10
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-4.5V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1
10
100
-V _DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
AUIRF5210S
1000
100
10
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-4.5V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1
10
100
-V _DS, Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
1000
100
10
TJ = 25°C
TJ = 150°C
1
0.1
2
VDS = -50V
60µs PULSE WIDTH
4
6
8
10 12 14
-VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
2.0
ID = -38A
VGS = -10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2015-9-30